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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
VDSS ID25
RDS(on)
= 150 V = 62 A 40 m
TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Test Conditions TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 10 TC = 25 C Maximum Ratings 150 150 20 30 62 150 50 30 1.0 10 350 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns W C C C
G D S D = Drain TAB = Drain (TAB) G DS (TAB) G S (TAB)
TO-220 (IXTP)
TO-3P (IXTQ)
300 C 2600 C 1.13/10 Nm/lb.in. 5.5 4 3 g g g
G = Gate S = Source
Features
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Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150 C
Characteristic Values Min. Typ. Max. 150 3.0 5.5 100 25 250 33 40 V V nA A A m
l
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
Easy to mount Space savings High power density
(c) 2006 IXYS All rights reserved
DS99154E(12/05)
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 14 24 2250 VGS = 0 V, VDS = 25 V, f = 1 MHz 660 185 27 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 10 (External) 38 76 35 70 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 38 S pF pF pF ns ns ns ns nC nC nC 0.42C/W (TO-3P) (TO-220) 0.21 0.25 C/W C/W TO-3P (IXTQ) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 62 150 1.5 150 2.0 A A V ns C TO-220 (IXTP) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V
TO-263 (IXTA) Outline
Pins: 1 - Gate 3 - Source
2 - Drain Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
Fig. 1. Output Characteristics @ 25C
60 50 VGS = 10V 110 100 90 9V 80 VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
40 8V 30 20 7V 10 0 0 0.5 1 1.5 2 2.5 3 3.5 6V
I D - Amperes
70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 7V 6V 8V
V D S - Volts Fig. 3. Output Characteristics @ 150C
2.8 60 50 VGS = 10V 9V 2.6 2.4 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 31A I D = 62A
I D - Amperes
40 30 20
8V 7V
6V 10 5V 0 0 1 2 3 4 5 6 7
V D S - Volts Fig. 5. RDS(on) Norm alized to
4 3.5
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
0.5 ID25 Value vs. ID
TJ = 175C
70 60 50
R D S ( o n ) - Normalized
3 2.5 2 1.5 1 0.5 0 20 40 60 VGS = 15V VGS = 10V
I D - Amperes
40 30 20 10 0
TJ = 25C
I D - Amperes
80
100
120
140
160
180
-50
-25
0
TC - Degrees Centigrade
25
50
75
100
125
150
175
(c) 2006 IXYS All rights reserved
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
Fig. 7. Input Adm ittance
120 105 90 75 60 45 30 15 0 5 6 7 8 9 1 0 1 1 36 32 28
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
24 20 16 12 8 4 0 0 15 30 45 60 75 90
TJ = -40C 25C 150C
TJ = 150C 25C -40C
105 120 135 150
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
180 10 9 150 8 7 VDS = 75V I D = 31A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
120
VG S - Volts
TJ = 150C TJ = 25C
6 5 4 3 2 1 0
90 60
30
0 0.4 0.6 0.8
V S D - Volts
1
1.2
1.4
1.6
0
10
20
30
40
50
60
70
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 TJ = 175C C iss R DS(on) Limit TC = 25C
Fig. 11. Capacitance
10000 f = 1MHz
Capacitance - picoFarads
I D - Amperes
100
25s 100s 1ms
1000
C oss
10 C rss
DC
10ms
100 0 5 10 15
1
V D S - Volts
20
25
30
35
40
1
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 62N15P IXTP 62N15P IXTQ 62N15P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0.45 0.40 0.35
R ( t h ) J C - C / W
0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2006 IXYS All rights reserved

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